Microfiche. [Washington, D.C. : National Aeronautics and Space Administration], 1984. 1 microfiche.
|Statement||prepared by: Anton C. Greenwald.|
|Series||NASA-CR -- 173938., NASA contractor report -- NASA CR-173938.|
|Contributions||Spire Corporation., Jet Propulsion Laboratory (U.S.)|
|The Physical Object|
Get this from a library! Excimer laser annealing to fabricate low cost solar cells: quarterly technical report no. 03 for period covering 1 October to 31 December [Anton C Greenwald; United States. National Aeronautics and Space Administration.]. The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference judybwolfman.com by: Organic–inorganic hybrid perovskite solar cells (PSCs) continue to attract considerable attention due to their excellent photovoltaic performance and low cost. In order to realize the fabrication of PSCs on temperature-sensitive substrates, low-temperature processing of all the components in the device is required, 7th EuCheMS Chemistry Congress – Molecular frontiers and global challenges. The objective of this program is to determine whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in the fabrication of crystalline silicon solar cells.
Therefore, the key enabler for low-cost, mass production of displays using conventional display glass was the nm excimer laser for selective low-temperature polysilicon recrystallization. The excimer laser process to form poly-Si is commonly referred to as excimer laser annealing (ELA). Energy Procedia 27 () â€“ Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientifi c committee of the SiliconPV conference. doi: /judybwolfman.com SiliconPV: April , , Leuven, Belgium Optimisation of ITO by excimer laser annealing for a-Si:H/c- Si solar cells S. MartÃn de NicolÃ¡s a, D. MuÃ±oz Cited by: 3. quarter fiscal orders were lower primarily due to timing of large excimer laser annealing orders. In the second quarter of fiscal , we received a large order from one customer for excimer laser annealing systems for low-temperature polycrystalline silicon (LTPS) processing, some. pulsed excimer laser processing for cost-effective solar cells arc0 solar, inc. zipbl: to demonstrate the cost effective feasibility of fabricatin6 16% efficient solar cells on mu diameter cz wafer usin6 pulsed excimer laser for junction formationi surface passivation, and.
ArF Excimer Laser Annealing of Polycrystalline Silicon Thin Film The laser is absorbed in amorphous silicon thin film surface without heating the substrate. In this paper, some important aspects of pulsed laser processing of semiconductors are reviewed, the advantages of excimer lasers for such work are assessed, the present status of laser processing of high-efficiency solar cells is discussed, and finally the possible future directions of Author: R. F. Wood. Precision excimer laser annealed Ga-doped ZnO electron transport layers for perovskite solar cells Article (PDF Available) in RSC Advances 8(32) · May with Reads. Unfortunately the cost to produce these solar cells is also very high, due to the large number of processing steps required. Varian believes that only the combination of high efficiency and low cost can meet the stated goal of $1/Wp. Excimer laser annealing to fabricate low cost solar cells. Quarterly technical report No. 2, 1 July